VIA-3 Resonant-tunneling hot-electron transistors (RHET's) using InGaAs/In(AlGa)As heterostructure

VIA3 Resonant-Tunneling Hot-Electron Transistors (RHET’s) Using InGaAs/In ( AlGa) As Heterostructure--I< , Imamura, S. Muto, H. Ohnishi, T. Fujii, and N. Yokoyama, Fu-jitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-01, Japan. This paper describes a resonant-tunneling hot-electron transistor (RHET) using an InGaAs/In( A1Ga)As heterostructure. A cornmon… CONTINUE READING