VDNROM: A Novel Four-Bits-Per-Cell Vertical Channel Dual-Nitride-Trapping-Layer ROM for High Density Flash Memory Applications

@article{Zhou2006VDNROMAN,
  title={VDNROM: A Novel Four-Bits-Per-Cell Vertical Channel Dual-Nitride-Trapping-Layer ROM for High Density Flash Memory Applications},
  author={FaLong Zhou and Yimao Cai and R. C. Huang and Yan Li and Xiaonan Shan and Jia Liu and Ao Guo and Xing Zhang and Yangyuan Wang},
  journal={2006 European Solid-State Device Research Conference},
  year={2006},
  pages={226-229}
}
A novel vertical channel nonvolatile memory cell with oxide-nitride-oxide-nitride-oxide (ONONO, dual nitride trapping layers) dielectrics stack is proposed and experimentally demonstrated for the first time. Compared with the conventional planar NROM cell, since the cell area of the proposed vertical structure is independent of the gate length, the VDNROM… CONTINUE READING