VA-7 GaAs planar doped barrier transistors

Abstract

A novel transistor incorporating the planar-doped barrier concept' has been fabricated in GaAs by molecular beam epitaxy. This device uses a forward-biased emitter barrier to accelerate lectrons to roughly 0.3 eV over a distance of a few hundred Angstroms, and i jects these electrons into a thin base region of a few thousand… (More)

Topics

Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.