Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

@article{Farmer2009UtilizationOA,
  title={Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.},
  author={Damon B. Farmer and Hsin-Ying Chiu and Yu-Ming Lin and Keith A. Jenkins and Fengnian Xia and Phaedon Avouris},
  journal={Nano letters},
  year={2009},
  volume={9 12},
  pages={4474-8}
}
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons… CONTINUE READING
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