Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

@article{Zhou2008UsingXD,
  title={Using x-ray diffraction to identify precipitates in transition metal doped semiconductors},
  author={Shengqiang Zhou and Kay Potzger and Georg Talut and Johannes von Borany and Wolfgang Skorupa and Manfred Helm and Juergen Fassbender},
  journal={Journal of Applied Physics},
  year={2008},
  volume={103}
}
In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion… 

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