# Using power diode models for circuit simulations-a comprehensive review

@article{Tan1999UsingPD, title={Using power diode models for circuit simulations-a comprehensive review}, author={Cher Ming Tan and King Jet Tseng}, journal={IEEE Trans. Ind. Electron.}, year={1999}, volume={46}, pages={637-645} }

In recent years, a number of new models for the power diode have been proposed. The objectives of this paper are to provide the power electronics community with a comprehensive review and summary of recent power diode models. The models have been categorized systematically according to their modeling concepts with objective comparison of their status pertaining to the various modeling issues. A summary table has been created to aid power circuit design engineers and power rectifier device…

## 48 Citations

### Implementation and Comparison of Power Diode Models for System Simulation

- Computer Science2005 International Conference on Power Electronics and Drives Systems
- 2005

The implementation of the dynamic charge and lumped charge models enable the straightforward realization of models for other power devices in MATLAB/Simulink, and promises to be useful for the simulation and optimisation of complex systems, while accommodating key aspects of device behaviour.

### REVIEW OF ADVANCED IGBT COMPACT MODELS DEDICATED TO CIRCUIT SIMULATION

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The paper aims to review the research area of the IGBT compact modelling and to introduce different device models. The models are separated in two groups, one that solves ambipolar diffusion equation…

### On the extraction of PiN diode design parameters for validation of integrated power converter design

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Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated…

### New physically-based PiN diode compact model for circuit modelling applications

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A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity…

### Performance Comparison of Circuit Simulator Lumped Models for the Body Diode Reverse Recovery of Low Voltage Power Trench MOSFETs

- Engineering
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Circuit simulator diode lumped models are investigated for representing the reverse recovery of low voltage power trench MOSFETs. Three previously presented models are compared in terms of internal…

### A simulation research on the reverse recovery characteristics of PIN diode

- Physics2011 International Conference on Electric Information and Control Engineering
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From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery…

### Performance of pn-junction diode lumped models for circuit simulators

- Engineering2006 IEEE International Symposium on Circuits and Systems
- 2006

Both frequency and time domain analysis are applied that justify the need of extending the basic charge-control model to more than a simple charge storage node to reduce the highly inaccurate prediction of the distributed diffusion and recombination processes that govern the dynamics of pn-junctions.

### Improved lumped charge model for high voltage power diode and automated extraction procedure

- Engineering2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- 2011

The “lumped charge” power diode compact model [1] is extended including impact ionization while maintaining the low computational cost. The new model can better reproduce the shape of the current…

### EMI measurements and modeling of a DC-DC Buck converter

- Engineering
- 2008

This thesis report focuses on how the EMI behavior of a simple step-down or buck converter
can be simulated. A very basic switching circuit is first examined and the knowledge gathered
from this…

### An evaluation framework for power electronic device models using decision making under uncertainties

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A numerical framework of decision making under incomplete knowledge is proposed, which quantifies the uncertainty of models and allows circuit designers to know the realistic expectations of the performance and, thus provides the level of appropriateness of the models.

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