Using power diode models for circuit simulations-a comprehensive review

  title={Using power diode models for circuit simulations-a comprehensive review},
  author={Cher Ming Tan and King Jet Tseng},
  journal={IEEE Trans. Ind. Electron.},
  • C. Tan, K. Tseng
  • Published 1 June 1999
  • Engineering
  • IEEE Trans. Ind. Electron.
In recent years, a number of new models for the power diode have been proposed. The objectives of this paper are to provide the power electronics community with a comprehensive review and summary of recent power diode models. The models have been categorized systematically according to their modeling concepts with objective comparison of their status pertaining to the various modeling issues. A summary table has been created to aid power circuit design engineers and power rectifier device… 

Implementation and Comparison of Power Diode Models for System Simulation

The implementation of the dynamic charge and lumped charge models enable the straightforward realization of models for other power devices in MATLAB/Simulink, and promises to be useful for the simulation and optimisation of complex systems, while accommodating key aspects of device behaviour.


The paper aims to review the research area of the IGBT compact modelling and to introduce different device models. The models are separated in two groups, one that solves ambipolar diffusion equation

On the extraction of PiN diode design parameters for validation of integrated power converter design

Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated

New physically-based PiN diode compact model for circuit modelling applications

A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity

Comprehensive steady-state analytical model of a three-phase diode rectifier connected to a constant DC voltage source

This study deals with the analytical modelling of the steady-state operation of a three-phase diode rectifier whose dc bus is connected to a constant voltage source. Such a system exhibits several

Performance Comparison of Circuit Simulator Lumped Models for the Body Diode Reverse Recovery of Low Voltage Power Trench MOSFETs

Circuit simulator diode lumped models are investigated for representing the reverse recovery of low voltage power trench MOSFETs. Three previously presented models are compared in terms of internal

A simulation research on the reverse recovery characteristics of PIN diode

From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery

Performance of pn-junction diode lumped models for circuit simulators

Both frequency and time domain analysis are applied that justify the need of extending the basic charge-control model to more than a simple charge storage node to reduce the highly inaccurate prediction of the distributed diffusion and recombination processes that govern the dynamics of pn-junctions.

Improved lumped charge model for high voltage power diode and automated extraction procedure

The “lumped charge” power diode compact model [1] is extended including impact ionization while maintaining the low computational cost. The new model can better reproduce the shape of the current

An evaluation framework for power electronic device models using decision making under uncertainties

  • C. J. KimP. Bofah
  • Computer Science
    Proceedings of the IEEE 2000 National Aerospace and Electronics Conference. NAECON 2000. Engineering Tomorrow (Cat. No.00CH37093)
  • 2000
A numerical framework of decision making under incomplete knowledge is proposed, which quantifies the uncertainty of models and allows circuit designers to know the realistic expectations of the performance and, thus provides the level of appropriateness of the models.



Modeling of power diodes with the lumped-charge modeling technique

The lumped-charge modeling technique is used to build a simple, physics-based power diode model for circuit simulators. The model consists of simplified, but fundamental semiconductor device

A unified diode model for circuit simulation

A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on

Full dynamic power diode model including temperature behavior for use in circuit simulators

  • H. GoebelK. Hoffmann
  • Physics
    Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics
  • 1992
Presented is a new power diode model based on a HYBRID method. This method solves the differential equations describing the semiconductor partly analytically and partly numerically. All important

A simple power diode model with forward and reverse recovery

  • C. MaP. Lauritzen
  • Physics
    PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference
  • 1991
The diode model presented is a simplified physical model for a high-voltage p-i-n structure operating in high level injection, as is typical for most power diodes. The model is an extension of the

An improved power diode model for PSPICE applied to converter simulation

This paper presents an improved and simplified model to simulate the soft recovery of the power diode in simulations using PSPICE. The new method is demonstrated by a two-MOSFET forward DC-FC

A new and accurate circuit-modelling approach for the power-diode

  • T. VoglerD. Schroder
  • Physics
    PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference
  • 1992
A class of bipolar power semiconductor models for time-saving large-topology circuit simulation is presented. The ambipolar diffusion equation is solved numerically including local effects such as

Simulation of turn-off dynamics in fast recovery power diodes

A model of a fast recovery power diode has been developed and implemented into a simulation program. The model is based on the physical process in the semiconductor device, no curve fitting

A precise model for the transient characteristics of power diodes

A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer,

A simple diode model with reverse recovery

The basic diode charge-control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport

Investigations on turn-off effects in fast-recovery power diodes by modelling and simulation

A model describing the transient turnoff behaviour of a fast-recovery power diode is derived and implemented into a simulation program for analysis of electrical networks. The modelling is based on