Using Bayesian Networks to Accurately Calculate the Reliability of Complementary Metal Oxide Semiconductor Gates

Abstract

Scaling complementary metal oxide semiconductor (CMOS) devices has been a method used very successfully over the last four decades to improve the performance and the functionality of very large scale integrated (VLSI) designs. Still, scaling is heading towards several fundamental limits as the feature size is being decreased towards 10 nm and less. One of… (More)
DOI: 10.1109/TR.2011.2161032

Topics

12 Figures and Tables

Cite this paper

@article{Ibrahim2011UsingBN, title={Using Bayesian Networks to Accurately Calculate the Reliability of Complementary Metal Oxide Semiconductor Gates}, author={Walid Ibrahim and Valeriu Beiu}, journal={IEEE Transactions on Reliability}, year={2011}, volume={60}, pages={538-549} }