# Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

@article{Johnson2019UnusualFO,
title={Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
$\beta$−Ga2O3},
author={Jared M. Johnson and Zhen Chen and Joel Basile Varley and Christine M. Jackson and Esmat Farzana and Zeng-ping Zhang and Aaron R. Arehart and Hsien-Lien Huang and A. Genç and Steven A. Ringel and Chris G. van de Walle and David A. Muller and Jinwoo Hwang},
journal={Physical Review X},
year={2019}
}
• Published 1 July 2019
• Materials Science
• Physical Review X
Author(s): Johnson, JM; Chen, Z; Varley, JB; Jackson, CM; Farzana, E; Zhang, Z; Arehart, AR; Huang, HL; Genc, A; Ringel, SA; Van De Walle, CG; Muller, DA; Hwang, J | Abstract: © 2019 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/" Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published…
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