Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder.

  title={Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder.},
  author={N. P. Stepina and E. S. Koptev and Arthur G Pogosov and Anatoly V. Dvurechenskii and Alexander Nikiforov and E. Yu. Zhdanov and Yuri M. Galperin},
  journal={Journal of physics. Condensed matter : an Institute of Physics journal},
  volume={25 50},
  • N. Stepina, E. Koptev, +4 authors Y. Galperin
  • Published 2 September 2013
  • Physics, Medicine
  • Journal of physics. Condensed matter : an Institute of Physics journal
The magnetoresistance in a two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero magnetic field conductances, where the transport regime changes from a hopping to a diffusive one. The behavior of the magnetoresistance is found to be similar for all samples--it is negative in weak fields and becomes positive with increasing magnetic field. The result apparently contradicts existing theories. To explain experimental data we suggest that clusters of overlapping quantum… 
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