Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials.

@article{Ang2018UniversalSL,
  title={Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials.},
  author={Yee Sin Ang and Hui Ying Yang and Lay Kee Ang},
  journal={Physical review letters},
  year={2018},
  volume={121 5},
  pages={
          056802
        }
}
  • Y. Ang, H. Yang, L. Ang
  • Published 5 March 2018
  • Materials Science, Physics, Medicine
  • Physical review letters
We identify a new universality in the carrier transport of two-dimensional (2D) material-based Schottky heterostructures. We show that the reversed saturation current (J) scales universally with temperature (T) as log(J/T^{β})∝-1/T, with β=3/2 for lateral Schottky heterostructures and β=1 for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic systems, single- and few-layer graphene, transition metal dichalcogenides, and… 
Universal Scaling and Signatures of Nodal Structures in Electron Tunneling from Two-Dimensional Semimetals
We present the theory of out-of-plane electron thermal-field emission from 2D semimetals. We show that the current($\mathcal{J}$)-field($F$)-temperature($T$) characteristic is captured by a universal
A universal method to fabricate p-n or Schottky heterojunctions based on two-dimensional electron gas
Two-dimensional electron gas (2DEG) has been studied extensively because of its abundant physical properties, but no effort has been made to construct p-n or Schottky heterojunctions based on it.
Thermal-Field Electron Emission from Three-Dimensional Topological Semimetals
A model is constructed to describe the thermal-field emission of electrons from a three-dimensional (3D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron
Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material
Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and
Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface.
TLDR
The results demonstrate the capabilities of nanoscale TERS spectroscopy to elucidate macroscopic structure-property relationships in 2D materials and to characterize lateral interfaces of 2D systems on length scales that are imperative for devices.
Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure.
We use first-principles simulations to investigate the structural and electronic properties of a heterostructure formed by graphene and monolayer GeI2(m-GeI2). While graphene has been extensively
Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors
TLDR
The fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels are reported, revealing that the p-type electrical conductivity and the field- effect mobility are growing functions of temperature.
Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure.
We use first-principles simulations to investigate the structural and electronic properties of a heterostructure formed by graphene and monolayer GeI2 (m-GeI2). While graphene has been extensively
Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities.
TLDR
The current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed and the relevant challenges for achieving high-performance devices are presented.
Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities
In the increasing demands for exotic device development in the fields of electronics, optoelectronics, sensors, energy, integrated circuits, and quantum technologies, 2D heterostructures can offer
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 138 REFERENCES
Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting
Carrier Delocalization in Two-Dimensional Coplanar p-n Junctions of Graphene and Metal Dichalcogenides.
TLDR
Careful analysis of the built-in potential profile shows strong reduction of Fermi level pinning, suggesting better control of the barrier in 2D metal-semiconductor junctions.
Semianalytical model of the contact resistance in two-dimensional semiconductors
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is
Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions
TLDR
It is demonstrated that van der Waals tunnel barriers atop bulk and ultrathin superconducting NbSe2 sustain a stable tunneling current and allow mapping of the spectral evolution of layered superconductors.
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.
TLDR
This review investigates the experimental efforts in interfacing 2D layers with 3D materials and analyzes the properties of the heterojunctions formed between them, calling for careful reconsideration of the physical models describing the junction behavior.
Effective continuous model for surface states and thin films of three-dimensional topological insulators
Two-dimensional (2D) effective continuous models are derived for the surface states and thin films of a three-dimensional topological insulator (3DTI). Starting from an effective model for 3DTI based
Properties of in-plane graphene/MoS 2 heterojunctions
The graphene/MoS2 heterojunction formed by joining the two components laterally in a single plane promises to exhibit a low-resistance contact according to the Schottky–Mott rule. Here we provide an
Recent Advances in Two-Dimensional Materials beyond Graphene.
TLDR
Insight is provided into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies.
Monolayer 1T-NbSe2 as a Mott insulator
The emergence of exotic quantum phenomena is often triggered by a subtle change in the crystal phase. Transition metal dichalcogenides (TMDs) exhibit a wide variety of novel properties, depending on
Strain engineering of Schottky barriers in single- and few-layer MoS 2 vertical devices
We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different
...
1
2
3
4
5
...