Universal Relationship between Low-Field Mobility and High-Field Carrier Velocity in High-K and SiO2 Gate Dielectric MOSFETs

@article{Saitoh2006UniversalRB,
  title={Universal Relationship between Low-Field Mobility and High-Field Carrier Velocity in High-K and SiO2 Gate Dielectric MOSFETs},
  author={Masumi Saitoh and K. Uchida},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
The relationships between velocity, v, and mobility, μ, are investigated to clarify the effectiveness of μ enhancement to increase v in short channel FETs with SiO<sub>2</sub> as well as high-K gate dielectric. The v-μ relationships were extracted on the basis of accurate understanding of v-μ dependence of μ; v<sub>sub</sub> dependences of μ in high-K, high N<sub>sub</sub>, and short-channel FETs were carefully studied and the deviations from the standard V<sub>sub</sub> dependence were found… CONTINUE READING