Unipolar Hot Electron

Abstract

We discuss kinematic and dynamical constrains in design of useful unipolar hot electron transistors. In addition, we demonstrate room temperature operation of a double heterojunction hot electron transistor with a twodimensional electron gas forming the base region. Our test structure has the narrowest ever reported base width at a mere I O O A and is the first such transistor to show current gain in excess of 10 at room temperature. The device uses an indirect, wide bandgap AISb, 92 As,, emitter and the transistor base is a thin InAs layer.

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Cite this paper

@inproceedings{Levi1987UnipolarHE, title={Unipolar Hot Electron}, author={A . F . J . Levi and T . H . Chid}, year={1987} }