Unified analytical modeling of GAA nanoscale MOSFETs

@article{Vishvakarma2010UnifiedAM,
  title={Unified analytical modeling of GAA nanoscale MOSFETs},
  author={Santosh Kumar Vishvakarma and Udit Monga and Tor A. Fjeldly},
  journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology},
  year={2010},
  pages={1733-1736}
}
An analytical model is presented for the 3D subthreshold electrostatics of low-doped gate-all-around MOSFETs with circular and square cross sections. The model is based on a solution of the 3D Laplace equation utilizing the high symmetry of the devices and assuming near-parabolic potential distributions in the directions perpendicular to the gates for the central regions. To account for short-channel effects, additional functional forms are used near source and drain. High precision is made… CONTINUE READING
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