Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

@article{Guo2017UnifiedMF,
  title={Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs},
  author={Alex Guo and Jes{\'u}s A. del Alamo},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={2142-2147}
}
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (<inline-formula> <tex-math notation="LaTeX">${\rm {V_T}})$ </tex-math></inline-formula>, maximum transconductance (<inline-formula> <tex-math notation="LaTeX">${\rm {g_{m,max}}})$ </tex-math></inline-formula>, and subthreshold swing (S). Our results show a universal continuous, symmetrical, and reversible… CONTINUE READING

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