Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

@inproceedings{BengoecheaEncabo2011UnderstandingTS,
  title={Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks},
  author={Ana Bengoechea-Encabo and Francesca Barbagini and Sergio Fern{\'a}ndez-Garrido and J. Grandal and Jelena Risti{\'c} and M. A. S{\'a}nchez-Garc{\'i}a and Enrique Calleja and Uwe Jahn and E. Luna and Achim Trampert},
  year={2011}
}
The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth… CONTINUE READING

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