Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

@article{Mudanai2001UnderstandingTE,
  title={Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs},
  author={S. Mudanai and L. F. Register and A 1 Tasch and S. K. Banerjee},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={145-147}
}
A comprehensive analysis of the effects of wave function penetration on the capacitance of NMOS capacitors has been performed for the first time, using a self-consistent Schrodinger-Poisson solver. The study reveals that accounting for wave function penetration into the gate dielectric causes carrier profile to be shifted closer to the gate dielectric reducing the electrical oxide thickness. This shift increases with increasing gate voltage. For example, in one simulation, the peak is shifted… CONTINUE READING
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