Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

@article{Ando2009UnderstandingMM,
  title={Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process},
  author={Takashi Ando and M. M. Frank and Kisik Choi and ChangHwan Choi and J. Bruley and M. Hopstaken and Matt Copel and E. Cartier and A. Kerber and Alessandro Callegari and D. Lacey and S. L. Brown and Qingyun Yang and V. Narayanan},
  journal={2009 IEEE International Electron Devices Meeting (IEDM)},
  year={2009},
  pages={1-4}
}
We demonstrate a novel “remote interfacial layer (IL) scavenging” technique yielding a record-setting equivalent oxide thickness (EOT) of 0.42 nm using a HfO2-based MOSFET high-к gate dielectric. Intrinsic effects of IL scaling on carrier mobility are clarified using this method. We reveal that the mobility degradation observed for La-containing high-к is not due to the La dipole but due to the intrinsic IL scaling effect, whereas an Al dipole brings about additional mobility degradation. This… CONTINUE READING
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