Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD.

Abstract

Area-selective thin film deposition is expected to be important for advanced sub-10 nanometer semiconductor devices, enabling feature patterning, alignment to underlying structures, and edge definition. Several atomic layer deposition (ALD) processes show inherent propensity for substrate-dependent nucleation. This includes tungsten ALD (W-ALD) which is… (More)
DOI: 10.1063/1.4967811

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Cite this paper

@article{Lemaire2017UnderstandingIS, title={Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD.}, author={Paul C Lemaire and Mariah J King and Gregory N Parsons}, journal={The Journal of chemical physics}, year={2017}, volume={146 5}, pages={052811} }