Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

@article{Tyaginov2016UnderstandingAM,
  title={Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs},
  author={S. E. Tyaginov and Markus Jech and Jacopo Franco and Prateek Sharma and Ben Kaczer and Tibor Grasser},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={84-87}
}
Using our physics-based model for hot-carrier degradation (HCD), we analyze the temperature behavior of HCD in nMOSFETs with a channel length of 44 nm. It was observed that, contrary to most previous findings, the linear drain current change (AId,lin) measured during hot-carrier stress in these devices appears to be lower at higher temperatures. However, the difference between the AId,lin values obtained at different temperatures decreases as the stress voltage increases. This trend is… CONTINUE READING
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