Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers

@article{Kaur2017UnderstandingST,
  title={Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers},
  author={Gurleen Kaur and Neeraj Dwivedi and Xin Zheng and Baochen Liao and Ling Z. Peng and Aaron J. Danner and Rolf A. Stangl and Charanjit Singh Bhatia},
  journal={IEEE Journal of Photovoltaics},
  year={2017},
  volume={7},
  pages={1224-1235}
}
In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by atomic layer deposited aluminum oxide (ALD AlO<italic><sub>x</sub></italic>), is investigated. Specifically, we investigated the effect of surface modification of the c-Si interface prior to the ALD AlO<italic><sub>x</sub></italic> deposition (via −H and −OH termination of the c-Si wafer) over a large range of AlO<italic><sub>x</sub></italic> thicknesses (0.4–80 nm). Fourier transform infrared (FTIR… CONTINUE READING