Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

@article{Takeuchi2007UnderstandingRT,
  title={Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies},
  author={Kiyoshi Takeuchi and Takamitsu Fukai and Takaaki Tsunomura and A. T. Putra and Akio Nishida and Shiro Kamohara and Toshiro Hiramoto},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={467-470}
}
Random threshold voltage (VM) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes to N-FETs. 
Highly Influential
This paper has highly influenced 10 other papers. REVIEW HIGHLY INFLUENTIAL CITATIONS
Highly Cited
This paper has 176 citations. REVIEW CITATIONS

From This Paper

Topics from this paper.
82 Citations
0 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 82 extracted citations

176 Citations

02040'09'11'13'15'17
Citations per Year
Semantic Scholar estimates that this publication has 176 citations based on the available data.

See our FAQ for additional information.

Similar Papers

Loading similar papers…