Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors

@article{Szabo2013UndertheBarrierMA,
  title={Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors},
  author={Aron Szabo and Mathieu Luisier},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={2353-2360}
}
In this paper, we present a computationally efficient full-band method to determine the current characteristics of circular, gate-all-around nanowire (NW) FETs in the sub-10-nm regime. The well-established top-of-the-barrier model is extended to consider intraband tunneling through the Wentzel-Kramers-Brillouin approximation. The required electrostatic potential is obtained using a parabolic approximation for its radial component, thus reducing Poisson equation to an 1-D problem and the… CONTINUE READING
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