Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) represent a rapidly maturing technology plagued by reliability issues which are not well understood. One such issue is the relationship between gate leakage and the formation of reaction-based defects at the interface between the gate metal and the underlying epitaxial semiconductor layers. Here, the… (More)
DOI: 10.1016/j.microrel.2012.05.015

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Cite this paper

@article{Whiting2012UndergateDF, title={Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors}, author={P. G. Whiting and N. G. Rudawski and M. R. Holzworth and Stephen J. Pearton and K. S. Jones and L. Liu and T. S. Kang and Fan Ren}, journal={Microelectronics Reliability}, year={2012}, volume={52}, pages={2542-2546} }