Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

  title={Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots},
  author={Il‐Kyu Park and Min Ki Kwon and Seong-Bum Seo and Ja‐Yeon Kim and Jae-Hong Lim and Seong-Ju Park},
  journal={Applied Physics Letters},
A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light… 

Figures from this paper

Green light-emitting diodes with self-assembled in-rich InGaN quantum dots

A green light-emitting diode (LED) was fabricated using self-assembled In-rich InGaN quantum dots (QDs). The photoluminescence studies showed that the QDs provide thermally stable deeply localized

Effect of InGaN quantum dot size on the recombination process in light-emitting diodes

The effect of InGaN quantum dot (QD) size on the performance of light-emitting diodes (LEDs) was investigated by varying the QD size from 1.32to2.81nm. The electroluminescence peak of the LEDs

AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Self-assembled GaN quantum dots (QDs) grown on Al0.5Ga0.5N have been used as the active region of light emitting diodes (LEDs). The LED emission wavelength exhibits a strong shift towards higher

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

Improved growth parameters were used by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy and a 10-layer InGaN/GaN QD LED is demonstrated successfully.

Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first

InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes

InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes, laser diodes, single photon emitters) in the visible spectral range. In order to understand the optical

Optical properties of single InGaN quantum dots and their devices

Nitride‐based quantum dots have many attractive optical properties for the realization of quantum dot (QD) based devices which will be presented in this contribution. We will analyze the basic

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K, an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers.



InGaN/GaN multi-quantum dot light-emitting diodes

Luminescence efficiency of InGaN multiple-quantum-well ultravioletlight-emitting diodes

The electroluminescence efficiency of In0.06Ga0.94N∕GaN multiple-quantum-well UV light-emitting diodes (LEDs) with emission wavelength of 400nm has been investigated and compared with blue (470nm)

A UV Light-Emitting Diode Incorporating GaN Quantum Dots

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼0.1)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic

From visible to white light emission by GaN quantum dots on Si(111) substrate

GaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 °C on AlN has been investigated in situ by reflection high-energy

Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski–Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to

Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

The photoluminescence investigation at a low temperature was carried out in In0.13Ga0.87N/GaN single quantum well (SQW) and multiple quantum wells with 10 (10QW) or 5 periods. With decreasing number

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.