Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

@article{Park2007UltravioletLD,
  title={Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots},
  author={Il‐Kyu Park and Min Ki Kwon and Seong-Bum Seo and Ja‐Yeon Kim and Jae-Hong Lim and Seong-Ju Park},
  journal={Applied Physics Letters},
  year={2007},
  volume={90},
  pages={111116}
}
A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light… 

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