Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

@inproceedings{Hazra2014UltravioletPP,
  title={Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer},
  author={Purnima Hazra and Satyendra Kumar Singh and Satyabrata Jit},
  year={2014}
}
The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes… CONTINUE READING

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A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity.

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