Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

@article{Hazra2014UltravioletPP,
  title={Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer},
  author={P. Hazra and S. K. Singh and S. Jit},
  journal={Journal of Semiconductor Technology and Science},
  year={2014},
  volume={14},
  pages={117-123}
}
  • P. Hazra, S. K. Singh, S. Jit
  • Published 2014
  • Computer Science
  • Journal of Semiconductor Technology and Science
  • The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes… CONTINUE READING
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