Ultraviolet GaN Single Quantum Well Laser Diodes

@inproceedings{Nagahama2001UltravioletGS,
  title={Ultraviolet GaN Single Quantum Well Laser Diodes},
  author={Shin-ichi Nagahama and Tomoya Yanamoto and Masahiko Sano and Takashi Mukai},
  year={2001}
}
The ultraviolet laser diodes (LDs) whose active layers consisted of binary GaN were grown on epitaxially laterally overgrown GaN substrates by a metalorganic chemical vapor deposition method. For the first time, we observed the lasing emission from binary GaN active layer by current injection. The emission wavelength of GaN single quantum well LDs was 366.9 nm under pulsed current injection and 369.0 nm under continuos-wave (cw) operation at room temperature. The threshold current density and… CONTINUE READING