Ultraviolet Emission from a Diamond pn Junction

@article{Koizumi2001UltravioletEF,
  title={Ultraviolet Emission from a Diamond pn Junction},
  author={Satoshi Koizumi and Kenji Watanabe and Masataka Hasegawa and Hisao Kanda},
  journal={Science},
  year={2001},
  volume={292},
  pages={1899 - 1901}
}
We report the realization of an ultraviolet light–emitting diode with the use of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond layer and phosphorus-doped n-type diamond layer grown epitaxially on the {111} surface of single crystalline diamond. The pn junction exhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination. 

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References

SHOWING 1-10 OF 10 REFERENCES

Current Injection Free-Exciton Recombination Emission from Synthesized Diamond

Emission in the UV region is obtained at room temperature from a current injection light-emitting device composed of high-quality synthesized diamond crystal. The operating wavelength is observed to

Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

An n-type semiconducting diamond thin film was obtained by microwave enhanced plasma chemical vapor deposition using phosphine (PH3) as a dopant source. A homoepitaxial diamond thin film with a

Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond

The edge-recombination-radiation spectrum from natural semiconducting diamond has been re-examined and compared with spectra obtained for the first time from aluminum and nominally boron-doped

Preparation of ohmic contacts to semiconducting diamond

Low resistance ohmic contacts were manufactured on a natural semiconducting diamond (type IIb), by implanting boron ions at a temperature of 200 degrees C. This was followed by annealing at 1200

High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron

High-quality B-doped homoepitaxial diamond films have been synthesized by microwave plasma chemical-vapor-deposition (CVD) using a mixture consisting of CH4, H2, and trimethylboron B(CH3)3 diluted by

Cathodoluminescence from high‐pressure synthetic and chemical‐vapor‐deposited diamond

The nature of an UV cathodoluminescence band, which can appear in both boron‐doped high‐pressure high‐temperature (HPHT) synthetic diamond and boron‐doped diamond grown by chemical‐vapor‐deposition

Ga Ohmic contact for n-type diamond by ion implantation

Electric contacts formed on an n-type diamond film by means of the Ga ion implantation were studied. The implanted Ga contacts revealed Ohmic property at room temperature. Contact resistivity for the