Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

@article{Kang1999UltrathinHO,
  title={Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application},
  author={Laegu Kang and Wen-Jie Qi and Renee Nieh and Yongjoo Jeon and Katsunori Onishi and J. C. Lee},
  journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
  year={1999},
  pages={133-136}
}
Physical, electrical and reliability characteristics of ultra thin HfO/sub 2/ as an alternative gate dielectric were studied for the first time. Crucial process parameters of oxygen modulated dc magnetron sputtering were optimized to achieve an equivalent oxide thickness (EOT) of 11.5 /spl Aring/ without deducting the quantum mechanical effect. Leakage current was 3/spl times/10/sup -2/ A/cm/sup 2/ at +1 V. Excellent dielectric properties such as high dielectric constant, low leakage current… CONTINUE READING
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