Ultrathin AlN∕GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface

@inproceedings{Onojima2008UltrathinAH,
  title={Ultrathin AlN∕GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface},
  author={Norio Onojima and Nobumitsu Hirose and Takashi Mimura and Toshiaki Matsui},
  year={2008}
}
  • Norio Onojima, Nobumitsu Hirose, +1 author Toshiaki Matsui
  • Published 2008
  • Physics
  • We deposited Si atoms on the AlN barrier surface of an ultrathin AlN∕GaN heterostructure field-effect transistor (HFET). This induced a remarkable change in the electrical properties of the two-dimensional electron gas. A 2-nm-thick Si layer reduced the sheet resistance of an AlN∕GaN HFET (AlN barrier, 2nm) from 60356to388Ω∕sq. The effect on the Ohmic contact was also significant: the presence of an undermost layer of Si atoms under Ohmic contacts produced a low specific contact resistance of 1… CONTINUE READING

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