Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

Abstract

We demonstrate an ultrashort pulse and high power single-section mode-locked laser using chirped multiple InAs/InP quantum dot (QD) layers as the active region of the laser. The chirped QD active region consists of seven layers of InAs QDs of different heights, which is beneficial in broadening the material gain spectrum. A transform-limited Gaussian pulse… (More)

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