Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

@inproceedings{Shih2015UltralowTD,
  title={Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs},
  author={Huan-Yu Shih and Makoto Shiojiri and Ching-Hsiang Chen and Sheng-Fu Yu and Chung-Ting Ko and J. Yang and Ray-Ming Lin and Miin-Jang Chen},
  booktitle={Scientific reports},
  year={2015}
}
High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 44 references

Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures

  • C. Ozgit-Akgun, E. Goldenberg, A. K. Okyay, N. Biyikli
  • J Mater Chem C
  • 2014

Effect of dislocation density on efficiency curves in InGaN/GaN multiple quantum well light-emitting diodes

  • Y Harada
  • Proc. SPIE 8278,82780J-1,
  • 2012

Basics, Opportunities, and Challenges

  • H. B. Profijt, S. E. Potts, M.C.M. van de Sanden, Kessels, W.M.M. Plasma-Assisted Atomic Layer Deposition
  • J Vac Sci Technol A 29, doi: 10.1116/1.3609974
  • 2011

Internal Quantum Efficiency of Whole - Composition - Range AlGaN Multiquantum Wells

  • K. Ban
  • Appl Phys Express
  • 2011

Internal Quantum Efficiency of Whole-Composition-Range AlGaN

  • K Ban
  • Multiquantum Wells. Appl Phys Express 4, doi: 10…
  • 2011

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