Ultralow drive voltage silicon traveling-wave modulator.

  title={Ultralow drive voltage silicon traveling-wave modulator.},
  author={Tom Baehr-Jones and Ran Ding and Yang Liu and Ali Ayazi and Thierry Pinguet and Nicholas Christopher Harris and Matt Streshinsky and Poshen Lee and Yi Zhang and Andy Eu-Jin Lim and Tsung-Yang Liow and Selin Hwee-Gee Teo and Guo-Qiang Lo and Michael Hochberg},
  journal={Optics express},
  volume={20 11},
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state… CONTINUE READING
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25 Gb / s 1 V - driving CMOS ring modulator with integrated thermal tuning

  • M. Hochberg Baehr-Jones, C. Walker, Eric Chan, D. Koshinz, W. Krug, A. Scherer
  • Opt . Express
  • 2011