Ultralow drive voltage silicon traveling-wave modulator.

@article{BaehrJones2012UltralowDV,
  title={Ultralow drive voltage silicon traveling-wave modulator.},
  author={Tom Baehr-Jones and Ran Ding and Yang Liu and Ali Ayazi and Thierry Pinguet and Nicholas Christopher Harris and Matt Streshinsky and Poshen Lee and Yi Zhang and Andy Eu-Jin Lim and Tsung-Yang Liow and Selin Hwee-Gee Teo and Guo-Qiang Lo and Michael Hochberg},
  journal={Optics express},
  year={2012},
  volume={20 11},
  pages={
          12014-20
        }
}
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state… CONTINUE READING
Highly Cited
This paper has 210 citations. REVIEW CITATIONS

From This Paper

Figures, tables, and topics from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 56 citations

210 Citations

0204060'13'15'17'19
Citations per Year
Semantic Scholar estimates that this publication has 210 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.
Showing 1-10 of 17 references

25 Gb / s 1 V - driving CMOS ring modulator with integrated thermal tuning

  • M. Hochberg Baehr-Jones, C. Walker, Eric Chan, D. Koshinz, W. Krug, A. Scherer
  • Opt . Express
  • 2011