Ultralow Voltage Crossbar Nonvolatile Memory Based on Energy-Reversible NEM Switches

  title={Ultralow Voltage Crossbar Nonvolatile Memory Based on Energy-Reversible NEM Switches},
  author={Kerem Akarvardar and H.-S. Philip Wong},
  journal={IEEE Electron Device Letters},
A novel nonvolatile nanoelectromechanical (NEM) memory (nRAM) is introduced. Differently than the previously proposed NEM memories, the nRAM achieves the nonvolatility via workfunction engineering and eliminates the need for cell selection devices in a crossbar array using a displacement current-based read scheme. Furthermore, the configuration of the nRAM is such that the elastic potential energy due to the beam bending is reversibly used for switching, which enables to combine ultralow… CONTINUE READING
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