Ultralow-Voltage Bilayer Graphene Tunnel FET

@article{Fiori2009UltralowVoltageBG,
  title={Ultralow-Voltage Bilayer Graphene Tunnel FET},
  author={Gianluca Fiori and Giuseppe Iannaccone},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1096-1098}
}
In this letter, we propose the bilayer graphene tunnel field-effect transistor (TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high I on/I off ratio at ultralow supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schrodinger equations in three dimensions, within the… 

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