Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

Abstract

The III-V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely… (More)
DOI: 10.1021/acs.nanolett.7b00430

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