Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

  title={Ultrahigh spontaneous emission quantum efficiency, 99.7\% internally and 72\% externally, from AlGaAs/GaAs/AlGaAs double heterostructures},
  author={I Schnitzer and Eli Yablonovitch and Catherine Caneau and Thomas J. Gmitter},
  journal={Applied Physics Letters},
Optically thin AlGaAs/GaAs/AlGaAs double heterostructures, (5000 A), are floated off their substrates by the epitaxial liftoff technique and mounted on various high reflectivity surfaces. From the absolute photoluminescence intensity, we measure internal and external quantum efficiencies of 99.7% and 72%, respectively. High spontaneous emission quantum efficiency, is important for photon number squeezed light, diode lasers, single‐mode light‐emitting‐diodes, optical interconnects, and solar… Expand

Figures from this paper

High external quantum efficiency of planar semiconductor structures
We have measured a very high photoluminescence external quantum efficiency (EQE) of 92% for a GaAs/GaInP double heterostructure mounted on a planar substrate. The measurement was made using a systemExpand
Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy
The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependentExpand
High external quantum efficiency from double heterostructure layers as selective emitters in thermophotonic systems
One of the main disadvantages of thermophotovoltaics is the need for a highly perfect selective emitter or filter to achieve high conversion efficiency. Thermophotonics overcomes this through the useExpand
Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling
We report on the growth and characterization of high external quantum efficiency (EQE) GaAs/GaInP double heterostructures. By properly treating the GaAs/GaInP interface, we are able to produceExpand
Understanding the origin of parasitic absorption in GaAs double heterostructures
Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaAs|GaInP double heterostructures (DHS) has been elusive. This is primarily due to the parasiticExpand
Electrically injected GaAsBi/GaAs single quantum well laser diodes
We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs haveExpand
Efficient GaAs light-emitting diodes by photon recycling
Heterostructure AlGaAs/GaAs light-emitting diodes (LEDs) with a thick active region have shown high external efficiencies, thanks to reabsorption in the active region. For high injection currents andExpand
3% External Quantum Efficiency From Surface Textured, Thin-film Light-emitting-diode Arrays
There is a significant gap between the internal efficiency of light-emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in highExpand
High external quantum efficiency from double heterostructure InGaP/GaAs layers as selective emitters for thermophotonic systems
In thermophotovoltaics (TPV) an emitter is heated up to a high temperature and emits infrared light. Above bandgap photons can then be converted into power by photovoltaic cells at room temperature.Expand
High-brightness red-emitting AlGaInP thin film RCLEDs
High brightness AlGaInP thin-film resonant cavity LEDs with an emission wavelength around 650 nm are presented. The combination of a thin-film waveguide structure and a resonant cavity with anExpand


Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures.
This work has studied the spontaneous emission of light from electron-hole recombination in optically thin GaAs double heterostructures and found the spontaneous-emission rate can be markedly increased or decreased depending on whether the surrounding refractive index is higher or lower than that of GaAs. Expand
Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films
We have observed lifetimes greater than 1 μs in moderately doped, thin film, n‐GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the substrate. We attribute these ultralongExpand
Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs
Minority‐carrier lifetimes, internal quantum efficiencies, and values of the radiative recombination coefficient B are determined from photoluminescence time‐decay and external quantum efficiencyExpand
As2S3/GaAs, a new amorphous/crystalline heterojunction for the III‐V semiconductors
Much of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As2S3/GaAs amorphous/crystalline heterojunctions show some technologicalExpand
Resonant cavity light‐emitting diode
A novel concept of a light‐emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emissionExpand
Photon Number Squeezed States in Semiconductor Lasers
This work has shown that the mutual coupling between a lasing junction and an external electrical circuit provides opportunities for exploring the macroscopic and microscopic quantum effects in open systems. Expand
Extreme selectivity in the lift‐off of epitaxial GaAs films
We have discovered conditions for the selective lift‐off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown. A 500‐A‐thick AlAs release layer is selectivityExpand
Optical properties of Au, Ni, and Pb at submillimeter wavelengths.
An exact analytical expression for P(omega) of a metal is derived by using a nonresonant cavity to measure at ambient temperature the angle averaged absorptance spectra of gold, nickel, and lead in the 30-300-cm(-1) wave-number region. Expand
Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding,Expand
Statistical ray optics
A statistical approach is taken toward the ray optics of optical media with complicated nonspherical and nonplanar surface shapes. As a general rule, the light in such a medium will tend to beExpand