Ultrahigh spontaneous emission extraction efficiency induced by evanescent wave coupling

  title={Ultrahigh spontaneous emission extraction efficiency induced by evanescent wave coupling},
  author={Xue-Lun Wang and S. Furue and Mutsuo Ogura and Valia Voliotis and Marco Ravaro and Alexandre Enderlin and Roger Grousson},
  journal={Applied Physics Letters},
A spontaneous emission extraction efficiency greater than 50% is observed in a GaAs/AlGaAs quantum well structure grown on the subwavelength-sized ridge top facet of a V-grooved substrate by means of photoluminescence study. This is an extraction efficiency about 20 times higher than that of a similar structure grown on a flat substrate. It is demonstrated both experimentally and theoretically that the high extraction efficiency is the result of the efficient conversion of evanescent waves into… 

Figures from this paper

Enhancement of light extraction efficiency by evanescent wave coupling effect in ridge-shaped AlGaInP/GaInP quantum wells
The optical properties of a sub-wavelength-sized ridge-shaped AlGaInP/GaInP quantum well structure fabricated by selective-area metal organic vapor phase epitaxy are investigated. The ridge structure
Controlling the directionality of spontaneous emission by evanescent wave coupling
We report an approach toward controlling the directionality of spontaneous emissions by employing the evanescent wave coupling effect in a subwavelength-sized ridge or truncated cone structure. An
Enhancement of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure by low-refractive-index surface layers.
The integrated PL intensity, and hence the light-extraction efficiency, can be enhanced by about 34% just by covering the ridge surface with a thin SiO2 layer, based on a finite-difference time-domain simulation of the electromagnetic field around the ridge top.
Enhancement of light-extraction efficiency in AlGaInP light-emitting diodes using evanescent wave coupling effect
Sub-wavelength-sized ridge structures that satisfy evanescent wave coupling effect requirements at the emission wavelength were fabricated through the photolithography and wet chemical etching of the
Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure
The light source position dependence of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure was investigated using the theoretical simulation and
Enhanced light extraction in GaN-based light-emitting diodes by evanescent wave coupling effect
Subwavelength-sized truncated cones satisfying the requirement for evanescent wave coupling effect at the emission wavelength were fabricated on the p-side of a GaN-based blue light-emitting diode
Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth.
The fabrication of a cross-wire p-i-n light emitting diode (LED) by molecular beam epitaxial overgrowth on mesa-patterned GaAs(100) substrates is presented and the electroluminescence operation of the LED is presented.
Growth and characterization of sub-wavelength-sized GaInP ridge structures on GaAs substrates
Abstract GaInP ridge structures with ridge-top facet widths in the sub-wavelength region (0.5–0.6 μm) and aligned along the [1 1 0] direction were successfully fabricated by selective-area
High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure
A nanodisk array of blue InGaN/GaN multiple quantum wells was made using neutral beam etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical and highly smooth
A Novel LED Light Extraction Technique Based on Evanescent Wave Coupling
A novel light extraction technique based on coupling of evanescent waves in a ridge structure is reported. This technique can extract directly light outside the escape cone, which cannot be achieved


Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy
The temperature dependence of photoluminescence (PL) properties of AlGaAs/GaAs quantum wire (QWR) grown on V‐grooved substrates by flow rate modulation epitaxy is investigated. PL from a 7.1 nm thick
Reduction of nonradiative recombination centers in V-grooved AlGaAs/GaAs quantum wires grown using tertiarybutylarsine
We report our comparative study on the luminescence recombination processes of V-grooved AlGaAs/GaAs quantum wires (QWRs) grown using tertiarybutylarsine (TBAs) and AsH3 as arsenic sources. Constant
Stimulated emission in semiconductor quantum wire heterostructures.
Amplified spontaneous emission and stimulated emission spectra of the GaAs/AlGaAs quantum wires exhibit fine structure arising from transitions between lateral, one-dimensional electron and hole subbands.
High precision temperature‐ and energy‐dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes
A GaAs‐Al0.22Ga0.78As heterostructure was prepared and used as a multimode optical waveguide. Propagation constants for individual modes were measured by exciting one mode at a time via real‐space
Inhibited spontaneous emission in solid-state physics and electronics.
If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.
Optical processes in microcavities
The dielectric microstructures act as ultrahigh Q factors optical cavities, which modify the spontaneous emission rates and alter the spatial distribution of the input and output radiation. The
Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends
We address the long-standing issue of extracting light as efficiently as possible from a high-index material, n/spl ges/2, where as little as 2%-10% of light not suffering total internal reflection
Epitaxial growth and optical properties of semiconductor quantum wires
In this paper we present a review on major advances achieved over the past ten years in the field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth techniques and
Progress of high-resolution photon scanning tunneling microscopy due to a nanometric fiber probe
The present status of a photon scanning tunneling microscope (PSTM) and its application are reviewed. In order to realize a nanometric apertured fiber probe, a highly reproducible chemical etching
Evanescent waves : from Newtonian optics to atomic optics
I. The Evanescent Field.- 1. Total Internal Reflection.- 1.1 The Electromagnetic Field at Total Internal Reflection.- 1.1.1 Snell's Law.- 1.1.2 Analysis of Total Internal Reflection on the Basis of