• Corpus ID: 241033110

Ultrahigh-sensitivity optical power monitor for Si photonic circuits

@inproceedings{Ochiai2021UltrahighsensitivityOP,
  title={Ultrahigh-sensitivity optical power monitor for Si photonic circuits},
  author={Takaya Ochiai and Kei Sumita and Shuhei Ohno and St{\'e}phane Monfray and Fr{\'e}d{\'e}ric Boeuf and Kasidit Toprasertpong and Shinichi Takagi and Mitsuru Takenaka},
  year={2021}
}
Takaya Ochiai, Kei Sumita, Shuhei Ohno, Stéphane Monfray, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka 1 Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan, Phone: +81-3-5841-6733, Fax: +81-3-5841-8564, 2 STMicroelectronics, 850 Rue Jean Monnet 38920 Crolles, France *E-mail: takenaka@mosfet.t.u-tokyo.ac.jp 

Figures from this paper

References

SHOWING 1-10 OF 21 REFERENCES
MoS2 photodetectors integrated with photonic circuits
In recent years, two-dimensional materials have risen as an attractive platform for integrated optoelectronics, due to their atomic scale thickness, favorable electrical, mechanical, and optical
Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane.
TLDR
Since the taperless structure makes the hybrid integration easier and more flexible, the hybrid MOS optical phase shifter with an ultrathin III-V membrane is promising for large-scale Si programmable photonic integrated circuits.
Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.
TLDR
SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing to make them very competitive when compared to other detector technologies.
High-performance graphene photodetector by interfacial gating
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the
[The 9th Silicon Technology Division Award Speech] Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
Hybrid InGaAsP/Si optical modulator gives silicon photonics an efficient scheme for phase modulation. An optical modulator integrated on silicon is a key enabler for high-performance optical
Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes
TLDR
This work demonstrates that multilayer WS2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS2-based optoelectronics.
Universal linear optics
TLDR
This work demonstrates a single reprogrammable optical circuit that is sufficient to implement all possible linear optical protocols up to the size of that circuit and programmed this system to implement heralded quantum logic and entangling gates, boson sampling with verification tests, and six-dimensional complex Hadamards.
Photogating in Low Dimensional Photodetectors
TLDR
The general photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.
Generation and sampling of quantum states of light in a silicon chip
TLDR
The techniques can be readily scaled for the on-chip implementation of specialized quantum algorithms with tens of photons, pointing the way to efficiency advantages over conventional computers15.
Characterization of Insertion Loss and Back Reflection in Passive Hybrid Silicon Tapers
The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the optical mode from a silicon waveguide to a hybrid silicon III/V waveguide. A passive chip was
...
...