Ultrafast transient grating spectroscopy in silicon quantum dots.


Transient grating spectroscopy detects directly the relaxation of the excited carriers rather than time-resolved photoluminescence and thus it is particularly desired for the indirect semiconductors such as silicon quantum dots. We investigate ultrafast carrier dynamics in silicon quantum dots embedded in silicon oxide matrix using femtosecond transient… (More)


Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.

Slides referencing similar topics