Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm

@inproceedings{Mangeney2003UltrafastR,
  title={Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm},
  author={Juliette Mangeney and Laurent Joulaud and Paul Crozat and J. M. Lourtioz and Jean Decobert},
  year={2003}
}
A 2.2 ps full-width-at-half-maximum impulse response is measured for ion-irradiated InGaAs photoconductive switches triggered by ultrashort 1.55 μm laser pulses. Correspondingly, the −3 dB bandwidth is estimated to be ∼120 GHz. Measurements of the electrical signals delivered by photoconductive switches are performed using an electro-optic sampling technique. As is shown, the ion irradiation reduces the carrier lifetime to less than 1 ps. The sheet resistance is 0.6×105 Ω/square. The… CONTINUE READING

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