Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

@article{Berg2001UltrafastGR,
  title={Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices},
  author={T. W. Berg and Sarah Bischoff and Ingibj{\"o}rg Magn{\'u}sd{\'o}ttir and Jarle Mork},
  journal={IEEE Photonics Technology Letters},
  year={2001},
  volume={13},
  pages={541-543}
}
Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer… CONTINUE READING
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