Ultrafast dynamics of Ni + -irradiated and annealed GaInAs/InP multiple quantum wells

@article{Dhaka2006UltrafastDO,
  title={Ultrafast dynamics of Ni + -irradiated and annealed GaInAs/InP multiple quantum wells},
  author={V. Dhaka and N. Tkachenko and H. Lemmetyinen and E. Pavelescu and S. Suomalainen and M. Pessa and K. Arstila and K. Nordlund and J. Keinonen},
  journal={Journal of Physics D},
  year={2006},
  volume={39},
  pages={2659-2663}
}
Carrier dynamics and optical activity of 10 MeV Ni + -irradiated and annealed GaInAs/InP quantum wells (QWs) have been studied using a time-resolved femtosecond up-conversion method. Quantitative results are obtained for a carrier capture time and a carrier lifetime (decay time) as a function of implantation dose. The carrier capture time decreases with the dose, while it is little affected by rapid thermal annealing (RTA). The capture time is 8 ps for the as-grown QW and 2 ps for the… Expand
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