Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

@article{Loka1998UltrafastAS,
  title={Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs},
  author={H. S. Loka and P. Smith},
  journal={IEEE Photonics Technology Letters},
  year={1998},
  volume={10},
  pages={1733-1735}
}
We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ//spl mu/m/sup 2/ average switching energy flux. 

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