Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

Abstract

We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ//spl mu/m/sup 2/ average switching energy flux. 

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Cite this paper

@article{Loka1998UltrafastAS, title={Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs}, author={H S Loka and P. W. E. Smith}, journal={IEEE Photonics Technology Letters}, year={1998}, volume={10}, pages={1733-1735} }