Ultrafast all-optical gated amplifier based on ZnO nanowire lasing

@article{Versteegh2012UltrafastAG,
  title={Ultrafast all-optical gated amplifier based on ZnO nanowire lasing},
  author={Marijn A M Versteegh and P.J.S. van Capel and Jaap I. Dijkhuis},
  journal={Applied Physics Letters},
  year={2012},
  volume={101},
  pages={021101}
}
We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it propagates diffusively through the forest. We have measured transmission increases at the drain up to a factor 34 for 385-nm light. Time-resolved amplification… 

Figures from this paper

Single nanowire defined emission properties of ZnO nanowire arrays

We report on stimulated emission from vertically aligned, vapor transport grown, ZnO nanowire arrays, and pumped by three-photon absorption in intense near-infrared femtosecond laser pulses. In

Intensive two-photon absorption induced decay pathway in a ZnO crystal: Impact of light-induced defect state

Using the pump-probe with phase object technique with 20 ps laser pulses at 532 nm, we investigated the carrier relaxation process subsequent to two-photon absorption (TPA) in ZnO. As a result, we

A Self-Consistent Quantum Field Theory for Random Lasing

The spatial formation of coherent random laser modes in strongly scattering disordered random media is a central feature in the understanding of the physics of random lasers. We derive a quantum

References

SHOWING 1-10 OF 37 REFERENCES

Ultrafast Upconversion Probing of Lasing Dynamics in Single ZnO Nanowire Lasers

The ultrafast lasing dynamics of single zinc oxide nanowires are studied by time-resolved upconversion of the lasing emission as a function of the ultraviolet excitation intensity. Induction times

Ultrafast wavelength-dependent lasing-time dynamics in single ZnO nanotetrapod and nanowire lasers.

The ultrafast lasing dynamics of single zinc oxide nanotetrapods and nanowires are investigated by two-color femtosecond excitation/optical injection spectroscopy and the change in lase dynamics as a function of wavelength is affected by band gap renormalization.

Resonance enhancement of optical second harmonic generation in a ZnO nanowire

Two-photon absorption measurement has been carried out in a single 80nm×10μm ZnO nanowire using femtosecond laser pulses in the wavelength range of 700–800nm. In addition to the deep-level green

Multiphoton route to ZnO nanowire lasers.

With intense femtosecond laser excitation, multiphoton absorption-induced stimulated emission and laser emission in ZnO bulk crystal and nanowires have been demonstrated at room temperature and attributed to the band-edge emission of the recombination of carriers excited by two- and three-photon absorption processes in the wide-bandgap semiconductor.

Single Nanowire Lasers

Ultraviolet lasing from single zinc oxide nanowires is demonstrated at room temperature. Near-field optical microscopy images quantify the localization and the divergence of the laser beam. The

Room-temperature laser emission of ZnO nanowires explained by many-body theory.

The conclusion is that lasing in ZnO nanowires at room temperature is not of excitonic nature, as is often thought, but instead is electron-hole plasma lasing.

Reflection of guided modes in a semiconductor nanowire laser

We analyze the waveguiding properties of semiconductor (GaN, ZnO, CdS) single nanowire lasers which were recently demonstrated experimentally. In particular, we compute the reflectivity for a few

Room-Temperature Ultraviolet Nanowire Nanolasers

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with