Ultrafast Uni-Traveling Carrier Photodiodes With GaAs0.5Sb0.5/In0.53 Ga0.47As Type-II Hybrid Absorbers for High-Power Operation at THz Frequencies

@article{Wun2018UltrafastUC,
  title={Ultrafast Uni-Traveling Carrier Photodiodes With GaAs0.5Sb0.5/In0.53 Ga0.47As Type-II Hybrid Absorbers for High-Power Operation at THz Frequencies},
  author={J. M. Wun and Yu-Wen Wang and Jin-Wei Shi},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2018},
  volume={24},
  pages={1-7}
}
We demonstrate a novel type of ultrafast photodiode (PD), which offers high-power performance in the THz regime. The incorporation of a type-II GaAs<sub>0.5</sub>Sb<sub>0.5</sub> (p)/In<sub>0.53</sub>Ga<sub>0.47</sub>As (i) hybrid absorber in the InP-based uni-traveling carrier photodiode (UTC-PD) structure leads to an improvement in the responsivity, due to the narrowing of the bandgap and enhancement of the photo-absorption process at the type-II interface between the GaAs<sub>0.5</sub>Sb<sub… CONTINUE READING

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