Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop.

Abstract

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light-emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in GaN, focusing on electron-phonon (e-ph) scattering and the cooling and nanoscale dynamics of hot carriers. We find that… (More)
DOI: 10.1021/acs.nanolett.7b02212

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