Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures

@article{Fedyanin2016UltrabrightSS,
  title={Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures},
  author={Dmitry Yu. Fedyanin and Mario Agio},
  journal={New Journal of Physics},
  year={2016},
  volume={18},
  pages={073012}
}
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots. Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased. Here we develop a theoretical framework to study single-photon emission… 
Ultrabright electrically driven single-photon source on diamond operating above room temperature
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  • Physics
    2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
  • 2017
Operation at the single-photon level is beneficial for energy efficiency in optical and optoelectronic devices and opens new prospects for novel applications, ranging from quantum cryptography to
Superinjection in Diamond p - i - n Diodes: Bright Single-Photon Electroluminescence of Color Centers Beyond the Doping Limit
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Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide
Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions.
Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications
TLDR
It is demonstrated that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.
Electrical excitation of color centers in diamond: Toward practical single-photon sources
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the
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  • Physics, Materials Science
    2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
  • 2018
Practical applications exploiting the quantum nature of light require efficient and bright room-temperature single-photon sources. At present, color centers in diamond are considered to be the most
Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures
TLDR
It is found that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-d diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i the type diamond region.
Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits
  • D. Fedyanin
  • Physics, Materials Science
    Advanced Quantum Technologies
  • 2021
Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects
Toward Ultrafast Tuning and Triggering Single-Photon Electroluminescence of Color Centers in Silicon Carbide
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates
Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment
TLDR
A theoretical approach is presented that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-Photon emitters based on them and develops a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.
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