Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures

  title={Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures},
  author={Dmitry Yu. Fedyanin and Mario Agio},
  journal={New Journal of Physics},
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots. Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased. Here we develop a theoretical framework to study single-photon emission… 
Ultrabright electrically driven single-photon source on diamond operating above room temperature
  • D. Fedyanin, M. Agio
  • Physics
    2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
  • 2017
Operation at the single-photon level is beneficial for energy efficiency in optical and optoelectronic devices and opens new prospects for novel applications, ranging from quantum cryptography to
Superinjection in Diamond p - i - n Diodes: Bright Single-Photon Electroluminescence of Color Centers Beyond the Doping Limit
Efficient generation of single photons on demand at a high repetition rate is a key to the practical realization of quantum-communication networks and optical quantum computations. Color centers in
Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide
Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions.
Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications
It is demonstrated that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.
Electrical excitation of color centers in diamond: Toward practical single-photon sources
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the
Superinjection in single-photon emitting diamond diodes
  • I. A. Khramtsov, D. Fedyanin
  • Physics, Materials Science
    2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
  • 2018
Practical applications exploiting the quantum nature of light require efficient and bright room-temperature single-photon sources. At present, color centers in diamond are considered to be the most
Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures
It is found that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-d diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i the type diamond region.
Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits
  • D. Fedyanin
  • Physics, Materials Science
    Advanced Quantum Technologies
  • 2021
Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects
Toward Ultrafast Tuning and Triggering Single-Photon Electroluminescence of Color Centers in Silicon Carbide
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates
Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment
A theoretical approach is presented that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-Photon emitters based on them and develops a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.


An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K
We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on
Electrically Driven Quantum Dot Micropillar Light Sources
We report on light sources based on electrically pumped quantum dot (QD) micropillar cavities. The low-mode-volume high-quality microstructures feature pronounced cavity quantum electrodynamics
Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks.
A huge variety of optical colour centres can be found in diamond, emitting in its whole wide transparency range. Although several of these centres have been demonstrated as single-photon emitters,
First Demonstration of Electrically Driven 1.55 µm Single-Photon Generator
We succeeded in demonstrating single-photon generation from a single InAs quantum dot (QD) at a 1.55 µm band by current injection. A p–i–n light-emitting diode (LED), which includes a quantum dot
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.
Blue single-photon emission with electrical injection from an In0.25Ga0.75N quantum dot in a single nanowire is demonstrated and the emitted single photons are linearly polarized along the c axis of the nanowires with a degree of linear polarization of ~70%.
Electrically Driven Single-Photon Source
Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source for applications in quantum information technology.
Diamond based light-emitting diode for visible single-photon emission at room temperature
Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single
Diamond-based single-photon emitters
The exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Sources of single photons are extremely important across many applications as they can serve
Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy
We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon