Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

@article{Lee2014UltrathinRS,
  title={Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique},
  author={Sangik Lee and Inrok Hwang and Sungtaek Oh and Sahwan Hong and Yeon Soo Kim and Yoonseung Nam and Keundong Lee and Chansoo Yoon and Wondong Kim and Bae Ho Park},
  journal={Scientific Reports},
  year={2014},
  volume={4}
}
High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self… 
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