Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

@article{Choi1999UltrathinBS,
  title={Ultra-thin body SOI MOSFET for deep-sub-tenth micron era},
  author={Yang-Kyu Choi and Kazunori Asano and Nick Lindert and Vaidyanathan Subramanian and Tsu-Jae King and J. Bokor and Chenming Hu},
  journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
  year={1999},
  pages={919-921}
}
A 40nm-gate-length ultra-thin body (UTB) nMOSFET is demonstrated. A self-aligned thin body SOI device has previously been proposed for suppressing the short channel effect. UTB structure can eliminate the punchthrough path between source and drain and provide a more evolutionary alternative to the double-gate MOSFET for deep-sub-tenth micron technology. The advantage of using UTB is illustrated through device simulation (with the aid of Silvaco ATLAS) using simple doping profiles for the body… CONTINUE READING

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